PSMN3R9-60PSQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

41.4ns

Package / Case :

TO-220-3

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

45 ns

Element Configuration :

Single

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

705A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Continuous Drain Current (ID) :

130A

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

62.7 ns

Power Dissipation-Max :

263W Tc

JEDEC-95 Code :

TO-220AB

Weight :

6.000006g

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

25.3 ns

Number of Terminations :

3

Pin Count :

3

Published :

2013

Max Dual Supply Voltage :

60V

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 25A, 10V