PSMN3R9-25MLC,115
- Mfr.Part #
- PSMN3R9-25MLC,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 70A LFPAK33
- Stock
- 1,433
- In Stock :
- 1,433
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 4.15mOhm @ 25A, 10V
- Published :
- 2012
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1524pF @ 12.5V
- Max Operating Temperature :
- 175°C
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 23.2ns
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Drain to Source Voltage (Vdss) :
- 25V
- Turn On Delay Time :
- 13 ns
- Input Capacitance :
- 1.524nF
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 70A
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 69W
- Fall Time (Typ) :
- 9.8 ns
- Supplier Device Package :
- LFPAK33
- Package / Case :
- SOT-1210, 8-LFPAK33
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 15.6 ns
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 69W Tc
- Max Dual Supply Voltage :
- 25V
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 25V
- Rds On Max :
- 4.15 mΩ
- Factory Lead Time :
- 26 Weeks
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 21.5nC @ 10V
- Drain to Source Resistance :
- 6.35mOhm
- Gate to Source Voltage (Vgs) :
- 1.95V
- Mounting Type :
- Surface Mount
- Datasheets
- PSMN3R9-25MLC,115

N-Channel Tape & Reel (TR) 4.15mOhm @ 25A, 10V ±20V 1524pF @ 12.5V 21.5nC @ 10V 25V SOT-1210, 8-LFPAK33
PSMN3R9-25MLC,115 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1524pF @ 12.5V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15.6 ns.This device has a drain-to-source resistance of 6.35mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 1.95V to 1.In addition to 25V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 25V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
PSMN3R9-25MLC,115 Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 15.6 ns
single MOSFETs transistor is 6.35mOhm
a 25V drain to source voltage (Vdss)
PSMN3R9-25MLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN3R9-25MLC,115 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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