PSMN3R5-80ES,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

338W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Number of Terminations :

3

Max Dual Supply Voltage :

80V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

338W

Fall Time (Typ) :

44 ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

109 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Pins :

3

Surface Mount :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Turn On Delay Time :

41 ns

Factory Lead Time :

20 Weeks

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

9800pF @ 30V

Rise Time :

43ns

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Drain to Source Breakdown Voltage :

80V

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Terminal Position :

Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

120A

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 25A, 10V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

676 mJ