PSMN3R5-25MLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

IEC-60134

FET Feature :

Schottky Diode (Body)

Avalanche Energy Rating (Eas) :

106.6 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Elements :

1

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G4

Gate Charge (Qg) (Max) @ Vgs :

18.9nC @ 10V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.72m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Power Dissipation-Max :

65W Tc

Drain-source On Resistance-Max :

0.00372Ohm

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1334pF @ 12V

Pin Count :

8

Continuous Drain Current (ID) :

70A

Pulsed Drain Current-Max (IDM) :

405A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

25V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Factory Lead Time :

26 Weeks

Number of Terminations :

4

Package / Case :

SC-100, SOT-669

RoHS Status :

ROHS3 Compliant

Published :

2016

DS Breakdown Voltage-Min :

25V

FET Type :

N-Channel