PSMN3R3-80ES,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

80V

Power Dissipation-Max :

338W Tc

Number of Pins :

3

Packaging :

Tube

Drain to Source Breakdown Voltage :

80V

Input Capacitance (Ciss) (Max) @ Vds :

9961pF @ 40V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Avalanche Energy Rating (Eas) :

676 mJ

Rise Time :

43ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation :

338W

Element Configuration :

Single

Turn On Delay Time :

41 ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn-Off Delay Time :

109 ns

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 25A, 10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Fall Time (Typ) :

44 ns

Surface Mount :

No

Continuous Drain Current (ID) :

120A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2010

JESD-609 Code :

e3

Factory Lead Time :

20 Weeks