PSMN3R3-80BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 25A, 10V

Terminal Form :

Gull wing

Power Dissipation :

306W

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

8161pF @ 40V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Rise Time :

29ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Number of Terminations :

2

Surface Mount :

yes

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

111nC @ 10V

Turn On Delay Time :

38 ns

Vgs (Max) :

±20V

Max Dual Supply Voltage :

80V

Terminal Finish :

Tin (Sn)

Resistance :

3.5mOhm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Pin Count :

3

Turn-Off Delay Time :

94 ns

Fall Time (Typ) :

33 ns

Continuous Drain Current (ID) :

120A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

80V

Published :

2014

Number of Pins :

3

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

306W Tc

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

676 mJ

Pulsed Drain Current-Max (IDM) :

760A

Packaging :

Tape and Reel (TR)