PSMN3R3-60PLQ
- Mfr.Part #
- PSMN3R3-60PLQ
- Manufacturer
- Nexperia
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 130A TO220AB
- Stock
- 91,255
- In Stock :
- 91,255
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Pin Count :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 54.2 ns
- Turn-Off Delay Time :
- 158 ns
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 5V
- Fall Time (Typ) :
- 109 ns
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Single
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation :
- 293W
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 100ns
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 10115pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 130A
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Published :
- 2013
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 293W Tc
- Max Dual Supply Voltage :
- 60V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 25A, 10V
- Datasheets
- PSMN3R3-60PLQ

N-Channel Tube 3.4m Ω @ 25A, 10V ±20V 10115pF @ 25V 95nC @ 5V TO-220-3
PSMN3R3-60PLQ Overview
The maximum input capacitance of this device is 10115pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 130A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 158 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 54.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 60V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
PSMN3R3-60PLQ Features
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 158 ns
PSMN3R3-60PLQ Applications
There are a lot of Nexperia USA Inc.
PSMN3R3-60PLQ applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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