PSMN3R0-60ES,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

8079pF @ 30V

Avalanche Energy Rating (Eas) :

800 mJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Elements :

1

Element Configuration :

Single

Power Dissipation :

306W

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Lead Free :

Lead Free

Radiation Hardening :

No

Fall Time (Typ) :

22 ns

Pin Count :

3

Power Dissipation-Max :

306W Tc

Published :

2014

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 10V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

20 Weeks

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

824A

Turn-Off Delay Time :

77 ns

Packaging :

Tube

Case Connection :

DRAIN

Turn On Delay Time :

31 ns

Number of Pins :

3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

26ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Max Dual Supply Voltage :

60V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V