PSMN3R0-60ES,127
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- Mfr.Part #
- PSMN3R0-60ES,127
- Manufacturer
- Nexperia
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A I2PAK
- Stock
- 17,208
- In Stock ：
- 17,208
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 77 ns
- Max Dual Supply Voltage :
- 60V
- Turn On Delay Time :
- 31 ns
- Avalanche Energy Rating (Eas) :
- 800 mJ
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 8079pF @ 30V
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 22 ns
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Power Dissipation :
- 306W
- Mounting Type :
- Through Hole
- Rise Time :
- 26ns
- Drain to Source Breakdown Voltage :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Published :
- 2014
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 100A
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 306W Tc
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 824A
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Number of Pins :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheets
- PSMN3R0-60ES,127
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N-Channel Tube 3m Ω @ 25A, 10V ±20V 8079pF @ 30V 130nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
PSMN3R0-60ES,127 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 8079pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 77 ns.Its maximum pulsed drain current is 824A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 31 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 60V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
PSMN3R0-60ES,127 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 824A.
PSMN3R0-60ES,127 Applications
There are a lot of Nexperia USA Inc.
PSMN3R0-60ES,127 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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