PSMN3R0-30YL,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

4

Gate Charge (Qg) (Max) @ Vgs :

45.8nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Surface Mount :

yes

Published :

2011

Number of Terminations :

4

Package / Case :

SC-100, SOT-669

Turn-Off Delay Time :

50 ns

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

75 mJ

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

100A

Turn On Delay Time :

34 ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Power Dissipation :

81W

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation-Max :

81W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2822pF @ 12V

Terminal Position :

Single

Rise Time :

58ns

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

21 ns

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

3m Ω @ 15A, 10V

JEDEC-95 Code :

MO-235

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Pin Count :

4

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

ECCN Code :

EAR99