PSMN3R0-30MLC,115
- Mfr.Part #
- PSMN3R0-30MLC,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 70A LFPAK33
- Stock
- 13,462
- In Stock :
- 13,462
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 26 Weeks
- Rds On (Max) @ Id, Vgs :
- 3.15m Ω @ 25A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Surface Mount :
- yes
- Pin Count :
- 8
- Avalanche Energy Rating (Eas) :
- 64 mJ
- Number of Terminations :
- 4
- Drain Current-Max (Abs) (ID) :
- 70A
- Gate Charge (Qg) (Max) @ Vgs :
- 34.8nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2330pF @ 15V
- JESD-30 Code :
- R-PSSO-G4
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 88W Tc
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-1210, 8-LFPAK33
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 30V
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.00405Ohm
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Pulsed Drain Current-Max (IDM) :
- 498A
- Published :
- 2012
- Drain to Source Voltage (Vdss) :
- 30V
- Reference Standard :
- IEC-60134
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Terminal Position :
- Single
- Datasheets
- PSMN3R0-30MLC,115

N-Channel Tape & Reel (TR) 3.15m Ω @ 25A, 10V ±20V 2330pF @ 15V 34.8nC @ 10V 30V SOT-1210, 8-LFPAK33
PSMN3R0-30MLC,115 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 64 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2330pF @ 15V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 498A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
PSMN3R0-30MLC,115 Features
the avalanche energy rating (Eas) is 64 mJ
based on its rated peak drain current 498A.
a 30V drain to source voltage (Vdss)
PSMN3R0-30MLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN3R0-30MLC,115 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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