PSMN2R9-25YLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Case Connection :

DRAIN

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

3.15m Ω @ 25A, 10V

JEDEC-95 Code :

MO-235

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2083pF @ 12V

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Radiation Hardening :

No

Package / Case :

SC-100, SOT-669

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

32 ns

Fall Time (Typ) :

13 ns

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Number of Terminations :

4

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

25V

Turn On Delay Time :

19.5 ns

Vgs (Max) :

±20V

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

19ns

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

92W Tc

Power Dissipation :

92W

Lead Free :

Lead Free

Resistance :

4.1mOhm

Number of Pins :

4

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant