PSMN2R8-40BS,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

211W Tc

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

100A

Radiation Hardening :

No

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

407 mJ

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

23 ns

Number of Pins :

3

Power Dissipation :

211W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rise Time :

29ns

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

3

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 10A, 10V

Published :

2012

Max Dual Supply Voltage :

40V

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

52 ns

Turn On Delay Time :

28 ns

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

797A

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

40V

Drain-source On Resistance-Max :

0.0029Ohm

Input Capacitance (Ciss) (Max) @ Vds :

4491pF @ 20V

Element Configuration :

Single