PSMN2R7-30PL,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Resistance :

2.7MOhm

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Mounting Type :

Through Hole

Surface Mount :

No

Package / Case :

TO-220-3

Power Dissipation-Max :

170W Tc

Continuous Drain Current (ID) :

100A

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Case Connection :

DRAIN

Turn-Off Delay Time :

75 ns

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3954pF @ 12V

Published :

2010

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation :

170W

Turn On Delay Time :

46 ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 15A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Pins :

3

Element Configuration :

Single

FET Type :

N-Channel

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Radiation Hardening :

No

Fall Time (Typ) :

35 ns

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Rise Time :

80ns

Drain to Source Breakdown Voltage :

30V

Max Dual Supply Voltage :

30V

Pin Count :

3

RoHS Status :

ROHS3 Compliant