PSMN2R7-30BL,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

245

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

3954pF @ 15V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

35 ns

Rise Time :

82ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Terminations :

2

Turn-Off Delay Time :

74 ns

Continuous Drain Current (ID) :

100A

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 10V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Number of Pins :

3

FET Type :

N-Channel

Turn On Delay Time :

46 ns

Power Dissipation :

170W

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

170W Tc

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Published :

2012

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Number of Elements :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Dual Supply Voltage :

30V

Terminal Form :

Gull wing