PSMN2R7-30BL,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Rise Time :

82ns

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

35 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

FET Type :

N-Channel

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

170W

Max Dual Supply Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2012

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 10V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

245

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3954pF @ 15V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Factory Lead Time :

12 Weeks

Number of Pins :

3

Radiation Hardening :

No

Continuous Drain Current (ID) :

100A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Turn On Delay Time :

46 ns

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

74 ns

Power Dissipation-Max :

170W Tc