PSMN2R6-60PSQ127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7629 pF @ 25 V

Package :

Bulk

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

140 nC @ 10 V

Rds On (Max) @ Id, Vgs :

2.6mOhm @ 25A, 10V

Series :

TrenchMOS?

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

FET Feature :

-

Drain to Source Voltage (Vdss) :

60 V

Power Dissipation (Max) :

326W (Ta)

Supplier Device Package :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

150A (Ta)