PSMN2R6-60PSQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

326W

Drain-source On Resistance-Max :

0.0026Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

7629pF @ 25V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

411 mJ

Surface Mount :

No

Number of Terminations :

3

Rise Time :

50ns

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 25A, 10V

Terminal Position :

Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Pulsed Drain Current-Max (IDM) :

961A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Power Dissipation-Max :

326W Tc

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Continuous Drain Current (ID) :

150A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

58 ns

Published :

2013

Package / Case :

TO-220-3

Packaging :

Tube

Max Dual Supply Voltage :

60V

Number of Pins :

3

Pin Count :

3

Turn-Off Delay Time :

87 ns

JEDEC-95 Code :

TO-220AB