PSMN2R6-40YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Terminations :

4

Number of Channels :

1

Number of Elements :

1

Terminal Position :

Single

Number of Pins :

4

Drain-source On Resistance-Max :

0.0028Ohm

FET Type :

N-Channel

Packaging :

Digi-Reel®

Max Junction Temperature (Tj) :

175°C

Drain to Source Breakdown Voltage :

40V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Pin Count :

4

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

JESD-609 Code :

e3

Height :

1.2mm

Turn On Delay Time :

24 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

131W

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

JEDEC-95 Code :

MO-235

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

SC-100, SOT-669

Power Dissipation-Max :

131W Tc

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Continuous Drain Current (ID) :

100A

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

46 ns

Input Capacitance (Ciss) (Max) @ Vds :

3776pF @ 12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks