PSMN2R5-60PLQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

349W Tc

Gate Charge (Qg) (Max) @ Vgs :

223nC @ 10V

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Terminal Position :

Single

Surface Mount :

No

Turn-Off Delay Time :

224 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 25A, 10V

Max Dual Supply Voltage :

60V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

349W

Fall Time (Typ) :

128 ns

Rise Time :

119ns

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

150A

Package / Case :

TO-220-3

Number of Pins :

3

Vgs (Max) :

±20V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Packaging :

Tube

Mounting Type :

Through Hole

FET Type :

N-Channel