PSMN2R4-30YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

FET Type :

N-Channel

Surface Mount :

yes

Power Dissipation-Max :

106W Tc

Turn-Off Delay Time :

17.4 ns

Number of Terminations :

4

Continuous Drain Current (ID) :

100A

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

2.2V

Terminal Form :

Gull wing

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Pin Count :

4

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Number of Channels :

1

Rise Time :

27.5ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

31.3nC @ 10V

Published :

2014

Fall Time (Typ) :

13.9 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

625A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

SC-100, SOT-669

Vgs (Max) :

±20V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2256pF @ 15V

Max Dual Supply Voltage :

30V

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

MO-235

Number of Pins :

4

Turn On Delay Time :

16.3 ns