PSMN2R4-30MLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

SOT-1210, 8-LFPAK33

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

91W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

70A

JESD-30 Code :

R-PSSO-G4

Vgs (Max) :

±20V

Surface Mount :

yes

Factory Lead Time :

26 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3264pF @ 15V

Turn On Delay Time :

15 ns

Rise Time :

23ns

Contact Plating :

Tin

Max Dual Supply Voltage :

30V

Number of Terminations :

4

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Number of Channels :

1

Terminal Position :

Single

Number of Pins :

8

Operating Temperature :

-55°C~175°C TJ

Published :

2015

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Power Dissipation-Max :

91W Tc

Pin Count :

8

Fall Time (Typ) :

13 ns

Number of Elements :

1

Avalanche Energy Rating (Eas) :

204 mJ

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0032Ohm

Turn-Off Delay Time :

19 ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V