PSMN2R4-30MLDX

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Mfr.Part #
PSMN2R4-30MLDX
Manufacturer
Nexperia
Package / Case
SOT-1210, 8-LFPAK33
Datasheet
Download
Description
MOSFET N-CH 30V 70A LFPAK33
Stock
125,973
In Stock :
125,973

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Package / Case :
SOT-1210, 8-LFPAK33
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
2.2V @ 1mA
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
91W
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
70A
JESD-30 Code :
R-PSSO-G4
Vgs (Max) :
±20V
Surface Mount :
yes
Factory Lead Time :
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
3264pF @ 15V
Turn On Delay Time :
15 ns
Rise Time :
23ns
Contact Plating :
Tin
Max Dual Supply Voltage :
30V
Number of Terminations :
4
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
30V
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
70A Tc
Number of Channels :
1
Terminal Position :
Single
Number of Pins :
8
Operating Temperature :
-55°C~175°C TJ
Published :
2015
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Power Dissipation-Max :
91W Tc
Pin Count :
8
Fall Time (Typ) :
13 ns
Number of Elements :
1
Avalanche Energy Rating (Eas) :
204 mJ
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.0032Ohm
Turn-Off Delay Time :
19 ns
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 25A, 10V
Datasheets
PSMN2R4-30MLDX
Introducing Transistors - FETs, MOSFETs - Single Nexperia PSMN2R4-30MLDX from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-1210, 8-LFPAK33, Number of Terminations:4, Mounting Type:Surface Mount, Number of Channels:1, Number of Pins:8, Operating Temperature:-55°C~175°C TJ, PSMN2R4-30MLDX pinout, PSMN2R4-30MLDX datasheet PDF, PSMN2R4-30MLDX amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia PSMN2R4-30MLDX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PSMN2R4-30MLDX


N-Channel Tape & Reel (TR) 2.4m Ω @ 25A, 10V ±20V 3264pF @ 15V 51nC @ 10V SOT-1210, 8-LFPAK33

PSMN2R4-30MLDX Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 204 mJ.A device's maximal input capacitance is 3264pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 70A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 30V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

PSMN2R4-30MLDX Features


the avalanche energy rating (Eas) is 204 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns


PSMN2R4-30MLDX Applications


There are a lot of Nexperia USA Inc.
PSMN2R4-30MLDX applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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