PSMN2R2-40BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Input Capacitance (Ciss) (Max) @ Vds :

8423pF @ 20V

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

FET Type :

N-Channel

Case Connection :

DRAIN

Pin Count :

3

Continuous Drain Current (ID) :

100A

Pulsed Drain Current-Max (IDM) :

962A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

306W Tc

JESD-30 Code :

R-PSSO-G2

Rise Time :

40.4ns

Turn-Off Delay Time :

66.6 ns

Published :

2012

Number of Terminations :

2

Radiation Hardening :

No

Turn On Delay Time :

33.2 ns

Terminal Form :

Gull wing

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Fall Time (Typ) :

25.2 ns

Transistor Element Material :

SILICON

Surface Mount :

yes

Max Dual Supply Voltage :

40V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

1.24 mJ

Number of Pins :

3

Drain-source On Resistance-Max :

0.0022Ohm

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Power Dissipation :

306W

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V