PSMN2R2-30YLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

765A

Terminal Position :

Single

Pin Count :

4

JEDEC-95 Code :

MO-235

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3310pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

36ns

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

23 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Vgs (Max) :

±20V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

92 mJ

Transistor Element Material :

SILICON

Turn On Delay Time :

26 ns

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Surface Mount :

yes

Max Dual Supply Voltage :

30V

Package / Case :

SC-100, SOT-669

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Published :

2011

Power Dissipation-Max :

141W Tc

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

2.15m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.0028Ohm

Power Dissipation :

141W

Turn-Off Delay Time :

47 ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Terminal Form :

Gull wing

Lead Free :

Lead Free

Continuous Drain Current (ID) :

100A

Radiation Hardening :

No

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE