PSMN2R2-30YLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

12 Weeks

Max Dual Supply Voltage :

30V

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0028Ohm

Vgs(th) (Max) @ Id :

1.95V @ 1mA

JESD-609 Code :

e3

Number of Elements :

1

Transistor Element Material :

SILICON

Radiation Hardening :

No

Published :

2011

Rise Time :

36ns

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

MO-235

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Position :

Single

Power Dissipation :

141W

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

765A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Number of Pins :

4

Avalanche Energy Rating (Eas) :

92 mJ

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Fall Time (Typ) :

23 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

2.15m Ω @ 25A, 10V

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

47 ns

Input Capacitance (Ciss) (Max) @ Vds :

3310pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Turn On Delay Time :

26 ns

Package / Case :

SC-100, SOT-669

FET Type :

N-Channel

Power Dissipation-Max :

141W Tc

Case Connection :

DRAIN

Additional Feature :

High Reliability

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ