PSMN2R2-25YLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

4

Additional Feature :

High Reliability

Turn On Delay Time :

24 ns

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Radiation Hardening :

No

Published :

2011

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

100A

Number of Terminations :

4

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

25V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Fall Time (Typ) :

16 ns

Power Dissipation-Max :

106W Tc

JESD-609 Code :

e3

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2542pF @ 12V

Lead Free :

Lead Free

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

FET Type :

N-Channel

Rise Time :

34ns

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

636A

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

60 mJ

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

JEDEC-95 Code :

MO-235

Vgs (Max) :

±20V

Power Dissipation :

106W

Package / Case :

SC-100, SOT-669

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

36 ns

Resistance :

3.15mOhm