PSMN2R1-40PLQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

96ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

9584pF @ 25V

FET Type :

N-Channel

Power Dissipation :

293W

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

151 ns

Contact Plating :

Tin

Package / Case :

TO-220-3

Pin Count :

3

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

150A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 25A, 10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

87.8nC @ 5V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

92 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

2.1V @ 1mA

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

293W Tc

Terminal Position :

Single

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

40V

Packaging :

Tube

Drain-source On Resistance-Max :

0.0026Ohm

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Turn On Delay Time :

56 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3