PSMN2R0-60PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

913 mJ

Terminal Position :

Single

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

1135A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

120A

Surface Mount :

No

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Published :

2012

Power Dissipation-Max :

338W Tc

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

9997pF @ 30V

Drain-source On Resistance-Max :

0.0022Ohm

Case Connection :

DRAIN

FET Type :

N-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc