PSMN2R0-60ES,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

9997pF @ 30V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Pin Count :

3

Factory Lead Time :

20 Weeks

Drain-source On Resistance-Max :

0.0022Ohm

Published :

2011

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

Power Dissipation-Max :

338W Tc

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

120A

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

1135A

Avalanche Energy Rating (Eas) :

913 mJ

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 25A, 10V

Number of Elements :

1