PSMN2R0-30YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Factory Lead Time :

12 Weeks

Number of Terminations :

4

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

100A

Pulsed Drain Current-Max (IDM) :

793A

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2011

Drain-source On Resistance-Max :

0.0025Ohm

FET Type :

N-Channel

Additional Feature :

High Reliability

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2m Ω @ 25A, 10V

Pin Count :

4

Power Dissipation-Max :

142W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

397 mJ

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Reference Standard :

IEC-60134

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Package / Case :

SC-100, SOT-669

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2969pF @ 15V

Terminal Position :

Single

Mount :

Surface Mount

JEDEC-95 Code :

MO-235

JESD-30 Code :

R-PSSO-G4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V