PSMN2R0-30PL,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 15A, 10V

Radiation Hardening :

No

Length :

31.75mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

Packaging :

Tube

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

6.35mm

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Turn On Delay Time :

63 ns

Height :

6.35mm

Max Dual Supply Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

211W Tc

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Fall Time (Typ) :

59 ns

Weight :

453.59237mg

Continuous Drain Current (ID) :

100A

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Pins :

3

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

6810pF @ 12V

Vgs (Max) :

±20V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0028Ohm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

555 mJ

Number of Terminations :

3

Turn-Off Delay Time :

111 ns

Mounting Type :

Through Hole

Rise Time :

125ns

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Power Dissipation :

211W

JEDEC-95 Code :

TO-220AB