PSMN2R0-30PL,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 15A, 10V

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Length :

31.75mm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0028Ohm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Power Dissipation-Max :

211W Tc

Number of Pins :

3

Terminal Position :

Single

Factory Lead Time :

12 Weeks

Packaging :

Tube

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Fall Time (Typ) :

59 ns

FET Type :

N-Channel

Weight :

453.59237mg

Number of Terminations :

3

Width :

6.35mm

Height :

6.35mm

Continuous Drain Current (ID) :

100A

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

6810pF @ 12V

Rise Time :

125ns

Drain to Source Breakdown Voltage :

30V

Published :

2009

Turn-Off Delay Time :

111 ns

Avalanche Energy Rating (Eas) :

555 mJ

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

63 ns

Power Dissipation :

211W