PSMN1R8-40YLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6680pF @ 20V

Published :

2012

Surface Mount :

yes

Case Connection :

DRAIN

Package / Case :

SC-100, SOT-669

Fall Time (Typ) :

31.7 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Rise Time :

37ns

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation-Max :

272W Tc

Continuous Drain Current (ID) :

100A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Additional Feature :

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Max Dual Supply Voltage :

40V

Turn-Off Delay Time :

62.5 ns

FET Type :

N-Channel

JEDEC-95 Code :

MO-235

Pin Count :

4

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 25A, 10V

Terminal Form :

Gull wing

Turn On Delay Time :

32.2 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Number of Pins :

4

Power Dissipation :

272W