PSMN1R8-30BL,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain-source On Resistance-Max :

0.0021Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

1120A

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

69 ns

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Power Dissipation :

270W

Transistor Element Material :

SILICON

Rise Time :

156ns

Input Capacitance (Ciss) (Max) @ Vds :

10180pF @ 15V

Surface Mount :

yes

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

JESD-609 Code :

e3

Radiation Hardening :

No

Continuous Drain Current (ID) :

100A

Pin Count :

3

Turn On Delay Time :

92 ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Published :

2012

Turn-Off Delay Time :

135 ns

Number of Pins :

3

Power Dissipation-Max :

270W Tc

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Max Dual Supply Voltage :

30V

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 25A, 10V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Avalanche Energy Rating (Eas) :

1.1 mJ

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V