PSMN1R7-30YL,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JESD-609 Code :

e3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

77.9nC @ 10V

JESD-30 Code :

R-PSSO-G4

Continuous Drain Current (ID) :

100A

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0026Ohm

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Surface Mount :

yes

Power Dissipation-Max :

109W Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

5057pF @ 12V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 15A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.75

Number of Elements :

1

Number of Terminations :

4

Transistor Application :

SWITCHING

Package / Case :

SC-100, SOT-669

Transistor Element Material :

SILICON

JEDEC-95 Code :

MO-235

Pulsed Drain Current-Max (IDM) :

790A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

241 mJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V