PSMN1R7-25YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pin Count :

4

Package / Case :

SC-100, SOT-669

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

JEDEC-95 Code :

MO-235

Packaging :

Tape and Reel (TR)

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

3415pF @ 12V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

25V

Terminal Form :

Gull wing

Terminal Position :

Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.00242Ohm

DS Breakdown Voltage-Min :

25V

FET Feature :

Schottky Diode (Body)

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 25A, 10V

Number of Terminations :

4

FET Type :

N-Channel

Reference Standard :

IEC-60134

Avalanche Energy Rating (Eas) :

746 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G4

Power Dissipation-Max :

135W Tc

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Number of Elements :

1

Published :

2011

Continuous Drain Current (ID) :

100A

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

860A

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

46.7nC @ 10V