PSMN1R5-30BLEJ
- Mfr.Part #
- PSMN1R5-30BLEJ
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 120A D2PAK
- Stock
- 19,751
- In Stock :
- 19,751
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 401W Tc
- Turn On Delay Time :
- 100.6 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 228nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Termination :
- Crimp
- Surface Mount :
- yes
- Material :
- Brass
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 120A
- Mounting Type :
- Surface Mount
- Max Dual Supply Voltage :
- 30V
- Fall Time (Typ) :
- 99.2 ns
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Pin Count :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 156.1ns
- Weight :
- 3.949996g
- Drain to Source Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 14934pF @ 15V
- Factory Lead Time :
- 12 Weeks
- Wire Gauge (Max) :
- 24 AWG
- Published :
- 2012
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 191.8 ns
- Rds On (Max) @ Id, Vgs :
- 1.5m Ω @ 25A, 10V
- Lead Free :
- Lead Free
- Wire Gauge (Min) :
- 20 AWG
- Plating :
- Gold, Tin
- Datasheets
- PSMN1R5-30BLEJ

N-Channel Tape & Reel (TR) 1.5m Ω @ 25A, 10V ±20V 14934pF @ 15V 228nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN1R5-30BLEJ Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14934pF @ 15V.This device has a continuous drain current (ID) of [120A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 191.8 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 100.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
PSMN1R5-30BLEJ Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 191.8 ns
PSMN1R5-30BLEJ Applications
There are a lot of Nexperia USA Inc.
PSMN1R5-30BLEJ applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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