PSMN1R4-30YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

High Reliability

Package / Case :

SC-100, SOT-669

Turn-Off Delay Time :

31.5 ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Surface Mount :

yes

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.42m Ω @ 25A, 10V

Max Dual Supply Voltage :

30V

Number of Terminations :

4

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

54.8nC @ 10V

Rise Time :

28ns

Fall Time (Typ) :

20.6 ns

Number of Channels :

1

Published :

2014

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

4

Radiation Hardening :

No

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

23 ns

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Application :

SWITCHING

Power Dissipation-Max :

166W Tc

Avalanche Energy Rating (Eas) :

653 mJ

Number of Elements :

1

Factory Lead Time :

12 Weeks

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

MO-235

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

100A