PSMN1R2-25YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

25V

Transistor Application :

SWITCHING

FET Feature :

Schottky Diode (Body)

Mount :

Surface Mount

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

25V

Power Dissipation-Max :

172W Tc

Avalanche Energy Rating (Eas) :

1293 mJ

Terminal Position :

Single

Continuous Drain Current (ID) :

100A

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G4

JEDEC-95 Code :

MO-235

Published :

2011

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 25A, 10V

FET Type :

N-Channel

Pin Count :

4

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

1163A

Factory Lead Time :

12 Weeks

Package / Case :

SC-100, SOT-669

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

4327pF @ 12V

Additional Feature :

High Reliability

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain-source On Resistance-Max :

0.00169Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

IEC-60134

Gate Charge (Qg) (Max) @ Vgs :

60.3nC @ 10V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON