PSMN1R2-25YLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Power Dissipation :

179W

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Output Type :

FIXED

Polarity :

Positive

Turn On Delay Time :

32 ns

Output Voltage :

2.5V

Rise Time :

42ns

Input Capacitance (Ciss) (Max) @ Vds :

4173pF @ 12V

Drain to Source Breakdown Voltage :

25V

Pin Count :

4

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Max Dual Supply Voltage :

25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

179W Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Number of Pins :

4

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 25A, 10V

Additional Feature :

HIGH RELIABILITY, ULTRA LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

29 ns

Turn-Off Delay Time :

60 ns

Max Output Current :

1A

Surface Mount :

yes

Accuracy :

1 %

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Lead Free :

Lead Free

Max Input Voltage :

20V

FET Type :

N-Channel

Vgs (Max) :

±20V

Package / Case :

SC-100, SOT-669

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Continuous Drain Current (ID) :

100A

Mounting Type :

Surface Mount

JEDEC-95 Code :

MO-235

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Quiescent Current :

6mA

Transistor Application :

SWITCHING

Published :

2011

Transistor Element Material :

SILICON

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Factory Lead Time :

12 Weeks