PSMN1R0-40YLDX

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Mfr.Part #
PSMN1R0-40YLDX
Manufacturer
Nexperia
Package / Case
SC-100, SOT-669
Datasheet
Download
Description
MOSFET N-CH 40V 280A LFPAK56
Stock
10,709
In Stock :
10,709

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
52 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
High Reliability
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Power Dissipation-Max :
198W Tc
Fall Time (Typ) :
38 ns
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Package / Case :
SC-100, SOT-669
Number of Channels :
1
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
100A
Published :
2014
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Rds On (Max) @ Id, Vgs :
1.1m Ω @ 25A, 10V
Number of Pins :
4
Input Capacitance (Ciss) (Max) @ Vds :
8845pF @ 20V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
127nC @ 10V
Surface Mount :
yes
Pin Count :
4
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Number of Terminations :
4
Rise Time :
62ns
Packaging :
Cut Tape (CT)
Factory Lead Time :
12 Weeks
Turn-Off Delay Time :
65 ns
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
2.2V @ 1mA
Avalanche Energy Rating (Eas) :
578 mJ
Lead Free :
Lead Free
Max Dual Supply Voltage :
40V
Number of Elements :
1
Datasheets
PSMN1R0-40YLDX
Introducing Transistors - FETs, MOSFETs - Single Nexperia PSMN1R0-40YLDX from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:SC-100, SOT-669, Number of Channels:1, Number of Pins:4, Number of Terminations:4, PSMN1R0-40YLDX pinout, PSMN1R0-40YLDX datasheet PDF, PSMN1R0-40YLDX amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia PSMN1R0-40YLDX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PSMN1R0-40YLDX


N-Channel Cut Tape (CT) 1.1m Ω @ 25A, 10V ±20V 8845pF @ 20V 127nC @ 10V SC-100, SOT-669

PSMN1R0-40YLDX Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 578 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8845pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 52 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

PSMN1R0-40YLDX Features


the avalanche energy rating (Eas) is 578 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 65 ns


PSMN1R0-40YLDX Applications


There are a lot of Nexperia USA Inc.
PSMN1R0-40YLDX applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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