PSMN1R0-40YLDX
- Mfr.Part #
- PSMN1R0-40YLDX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 280A LFPAK56
- Stock
- 10,709
- In Stock :
- 10,709
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 52 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Power Dissipation-Max :
- 198W Tc
- Fall Time (Typ) :
- 38 ns
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-100, SOT-669
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 100A
- Published :
- 2014
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 25A, 10V
- Number of Pins :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 8845pF @ 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 127nC @ 10V
- Surface Mount :
- yes
- Pin Count :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Rise Time :
- 62ns
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 65 ns
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.2V @ 1mA
- Avalanche Energy Rating (Eas) :
- 578 mJ
- Lead Free :
- Lead Free
- Max Dual Supply Voltage :
- 40V
- Number of Elements :
- 1
- Datasheets
- PSMN1R0-40YLDX

N-Channel Cut Tape (CT) 1.1m Ω @ 25A, 10V ±20V 8845pF @ 20V 127nC @ 10V SC-100, SOT-669
PSMN1R0-40YLDX Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 578 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8845pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 52 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
PSMN1R0-40YLDX Features
the avalanche energy rating (Eas) is 578 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 65 ns
PSMN1R0-40YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN1R0-40YLDX applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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