PSMN1R0-30YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

44.4ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

100A Tc

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.02m Ω @ 25A, 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Surface Mount :

yes

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

30V

Factory Lead Time :

12 Weeks

Turn On Delay Time :

32.4 ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

238W Tc

Gate Charge (Qg) (Max) @ Vgs :

121.35nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

MO-235

Transistor Application :

SWITCHING

Pin Count :

4

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

43 ns

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package / Case :

SC-100, SOT-669

Continuous Drain Current (ID) :

100A

Published :

2015

Additional Feature :

High Reliability

Number of Terminations :

4

Number of Channels :

1

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.2V @ 2mA

Input Capacitance (Ciss) (Max) @ Vds :

8598pF @ 15V

Fall Time (Typ) :

31.7 ns

Vgs (Max) :

±20V