PSMN1R0-25YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G4

FET Type :

N-Channel

Package / Case :

SC-100, SOT-669

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

25V

Rds On (Max) @ Id, Vgs :

0.89m Ω @ 25A, 10V

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

1762 mJ

DS Breakdown Voltage-Min :

25V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

100A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

160W Tc

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs (Max) :

±20V

FET Feature :

Schottky Diode (Body)

Drain-source On Resistance-Max :

0.00143Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5308pF @ 12V

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

71.8nC @ 10V

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

1226A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

IEC-60134

JEDEC-95 Code :

MO-235

Mount :

Surface Mount

Published :

2014

Pin Count :

4

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)