PSMN0R9-30YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

300A

Turn-Off Delay Time :

63 ns

Max Dual Supply Voltage :

30V

Pin Count :

4

Avalanche Energy Rating (Eas) :

2987 mJ

Continuous Drain Current (ID) :

100A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

7668pF @ 15V

Rise Time :

49.8ns

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

300A

Rds On (Max) @ Id, Vgs :

0.87m Ω @ 25A, 10V

Turn On Delay Time :

38.1 ns

Element Configuration :

Single

Number of Elements :

1

Number of Channels :

1

Number of Pins :

4

Published :

2015

Fall Time (Typ) :

42.6 ns

Surface Mount :

yes

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

291W

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

109nC @ 10V

Package / Case :

SOT-1023, 4-LFPAK

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V