PSMN0R9-25YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation-Max :

238W Tc

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

89.8nC @ 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

0.85m Ω @ 25A, 10V

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

300A Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

300A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

1614A

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Pin Count :

4

JEDEC-95 Code :

MO-235

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Drain-source On Resistance-Max :

0.0012Ohm

Avalanche Energy Rating (Eas) :

3343 mJ

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

25V

JESD-30 Code :

R-PSSO-G4

Package / Case :

SC-100, SOT-669

Number of Terminations :

4

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

6721pF @ 12V

Reference Standard :

IEC-60134