PSMN070-200P,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation :

250W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

200V

Terminal Finish :

Tin (Sn)

Surface Mount :

No

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Number of Pins :

3

Pin Count :

3

Vgs (Max) :

±20V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Published :

2002

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

100ns

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Element Configuration :

Single

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

4570pF @ 25V

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

22 ns

Factory Lead Time :

20 Weeks

HTS Code :

8541.29.00.75

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

80 ns

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.07Ohm

Drain to Source Breakdown Voltage :

200V

Power Dissipation-Max :

250W Tc

Number of Elements :

1

Packaging :

Tube

Avalanche Energy Rating (Eas) :

462 mJ

Series :

TrenchMOS™

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

140A

FET Type :

N-Channel

Continuous Drain Current (ID) :

35A

Fall Time (Typ) :

90 ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

70m Ω @ 17A, 10V

Case Connection :

DRAIN