PSMN070-200B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

80 ns

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Mounting Type :

Surface Mount

Series :

TrenchMOS™

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Power Dissipation-Max :

250W Tc

Number of Elements :

1

Pin Count :

3

FET Type :

N-Channel

Continuous Drain Current (ID) :

35A

Published :

2010

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Rise Time :

100ns

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Resistance :

70mOhm

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Max Dual Supply Voltage :

200V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Breakdown Voltage :

200V

Vgs (Max) :

±20V

Turn On Delay Time :

22 ns

Avalanche Energy Rating (Eas) :

462 mJ

Terminal Form :

Gull wing

Number of Pins :

3

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

70m Ω @ 17A, 10V

Lead Free :

Lead Free

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Element Configuration :

Single

Number of Terminations :

2

Power Dissipation :

250W

Input Capacitance (Ciss) (Max) @ Vds :

4570pF @ 25V

Fall Time (Typ) :

90 ns