PSMN059-150Y,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

59m Ω @ 12A, 10V

Power Dissipation :

113W

Number of Pins :

4

JESD-609 Code :

e3

Rise Time :

42ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Package / Case :

SC-100, SOT-669

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

27.9nC @ 10V

Published :

2013

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

JEDEC-95 Code :

MO-235

Continuous Drain Current (ID) :

43A

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

14.2 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Pin Count :

4

Power Dissipation-Max :

113W Tc

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Resistance :

59mOhm

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Drain to Source Breakdown Voltage :

150V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Radiation Hardening :

No

Fall Time (Typ) :

11.1 ns

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

54.2 ns

Avalanche Energy Rating (Eas) :

255 mJ

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1529pF @ 30V

Terminal Position :

Single

Max Dual Supply Voltage :

150V

Lead Free :

Lead Free