PSMN059-150Y,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1529pF @ 30V

Max Dual Supply Voltage :

150V

Rise Time :

42ns

Continuous Drain Current (ID) :

43A

Rds On (Max) @ Id, Vgs :

59m Ω @ 12A, 10V

Drain to Source Breakdown Voltage :

150V

Transistor Element Material :

SILICON

Turn On Delay Time :

14.2 ns

FET Type :

N-Channel

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Resistance :

59mOhm

Gate Charge (Qg) (Max) @ Vgs :

27.9nC @ 10V

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

54.2 ns

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Case Connection :

DRAIN

Lead Free :

Lead Free

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

255 mJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Fall Time (Typ) :

11.1 ns

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Pin Count :

4

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation-Max :

113W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

113W

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

4

JEDEC-95 Code :

MO-235

Package / Case :

SC-100, SOT-669

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes