PSMN038-100YLX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

94.9W Tc

Input Capacitance :

1.905nF

Mounting Type :

Surface Mount

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

SC-100, SOT-669

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

39.2nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Published :

2013

Drain to Source Resistance :

37.5mOhm

Gate to Source Voltage (Vgs) :

20V

Rise Time :

18ns

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

30A

Rds On (Max) @ Id, Vgs :

37.5mOhm @ 5A, 10V

Turn-Off Delay Time :

31 ns

Max Dual Supply Voltage :

100V

Min Operating Temperature :

-55°C

Supplier Device Package :

LFPAK56, Power-SO8

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

37.5 mΩ

Vgs (Max) :

±20V

Fall Time (Typ) :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

1905pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

10 ns

Number of Pins :

4