PSMN035-150P,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Surface Mount :

No

FET Type :

N-Channel

Number of Terminations :

3

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Power Dissipation-Max :

250W Tc

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

150V

Vgs(th) (Max) @ Id :

4V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

35m Ω @ 25A, 10V

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.035Ohm

Drain to Source Voltage (Vdss) :

150V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

460 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

50A

ECCN Code :

EAR99

HTS Code :

8541.29.00.75

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Factory Lead Time :

20 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4720pF @ 25V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Transistor Application :

SWITCHING