PSMN035-150B,118
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- Mfr.Part #
- PSMN035-150B,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NEXPERIA PSMN035-150B - 50A, 150
- Stock
- 630
- In Stock ：
- 630
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 79 ns
- Resistance :
- 35mOhm
- Rds On Max :
- 35 mΩ
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4720pF @ 25V
- Max Operating Temperature :
- 175°C
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Turn On Delay Time :
- 25 ns
- FET Type :
- N-Channel
- Factory Lead Time :
- 16 Weeks
- Continuous Drain Current (ID) :
- 50A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 35mOhm
- Number of Pins :
- 3
- Power Dissipation-Max :
- 250W Tc
- Rds On (Max) @ Id, Vgs :
- 35mOhm @ 25A, 10V
- Max Dual Supply Voltage :
- 150V
- Input Capacitance :
- 4.72nF
- Supplier Device Package :
- D2PAK
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Power Dissipation :
- 250W
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 150V
- Published :
- 2009
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- TrenchMOS™
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 79nC @ 10V
- Drain to Source Breakdown Voltage :
- 150V
- Fall Time (Typ) :
- 93 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Rise Time :
- 138ns
- Datasheets
- PSMN035-150B,118
N-Channel Tape & Reel (TR) 35mOhm @ 25A, 10V ±20V 4720pF @ 25V 79nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN035-150B,118 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4720pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [79 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 35mOhm.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 150V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
PSMN035-150B,118 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 79 ns
single MOSFETs transistor is 35mOhm
a 150V drain to source voltage (Vdss)
PSMN035-150B,118 Applications
There are a lot of Nexperia USA Inc.
PSMN035-150B,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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