PSMN034-100BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

127A

Max Dual Supply Voltage :

100V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

4.4V

Fall Time (Typ) :

9 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

23.8nC @ 10V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Power Dissipation-Max :

86W Tc

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

42 mJ

Continuous Drain Current (ID) :

32A

Input Capacitance (Ciss) (Max) @ Vds :

1201pF @ 50V

Drain to Source Breakdown Voltage :

90V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Power Dissipation :

86W

Terminal Form :

Gull wing

Rise Time :

10ns

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Turn-Off Delay Time :

28 ns

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

34.5m Ω @ 15A, 10V

Turn On Delay Time :

12 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING